Abstract
In this study, we report the influence of Te vacancy formation on the thermoelectric properties of n-type Cu_0.008Bi₂Te_2.7Se_0.3 alloys, including their electronic and thermal transport properties. Te-deficient Cu_0.008Bi₂Te_2.7-xSe_0.3 (x = 0, 0.005, 0.01 and 0.02) samples were systematically synthesized and characterized. Regarding electronic transport properties, carrier concentration was increased with..... More