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Polymer-Chain Aggregation-induced Electrical Gating at the H- and J-aggregate P3HT
Byoungnam Park
Korean J. Met. Mater. 2024;62(6):455-463.   Published online 2024 May 31
DOI: https://doi.org/10.3365/KJMM.2024.62.6.455

Abstract
This research explores how aggregation influences the electrical behavior at both the planar - heterojunction poly(3-hexylthiophene) (P3HT)/SiO2 and P3HT/ZnO nanocrystal (NC) interfaces. The formation of H- and J-type aggregates leads to distinct molecular ordering and packing structures, manifesting as changes in threshold voltage shifts (electrical gating) as well as absorption..... More

                
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