Korean J. Met. Mater. 2019;57(2):84-90. Published online 2019 Feb 5
DOI:
https://doi.org/10.3365/KJMM.2019.57.2.84
Abstract
Memristors have been extensively investigated as the fourth fundamental circuit element. Titanium oxide is a common material used to fabricate memristors. In this paper, we investigated the influence of the thickness of the oxide active layer on the Al/TiO2-x/TiO2/heavily doped electrode memristor architecture. An insulating TiO2 thin-film was deposited using.....
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