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Theoretical Maximum Thermoelectric Performance of Cu-doped and Electric Current Pulse-treated Bi-Sb-Te Alloys
Cu 도핑 및 Electric Current Pulse 공정에 의한 Bi-Sb-Te계 열전소재의 최대 열전성능지수 예측
Joonha Lee, Hyunjin Park, Junsu Kim, Won-Seon Seo, Sang-il Kim, Hyun-Sik Kim
이준하, 박현진, 김준수, 서원선, 김상일, 김현식
Korean J. Met. Mater. 2024;62(7):550-557.   Published online 2024 Jun 28
DOI: https://doi.org/10.3365/KJMM.2024.62.7.550

Abstract
Bi2Te3 shows high thermoelectric performance near room temperature, making it the most widely used material in thermoelectric cooling applications. Cu doping has been found to be effective in improving the thermoelectric performance of Bi2Te3. However, due to the problem of easy migration of Cu ions, the stability of Cu-doped Bi2Te3..... More

                
Estimation of Maximum <i>zT</i> in Cu<sub>3</sub>SbSe<sub>4</sub> for Different Starting Materials Content
시작물질 농도 제어에 따른 Cu3SbSe4 열전소재의 최대 열전성능지수 예측
Minkyu Lee, Seong-Mee Hwang, Se Jun Kim, Won-Seon Seo, Sang-il Kim, Hyun-Sik Kim
이민규, 황성미, 김세준, 서원선, 김상일, 김현식
Korean J. Met. Mater. 2024;62(6):487-493.   Published online 2024 May 31
DOI: https://doi.org/10.3365/KJMM.2024.62.6.487

Abstract
Cu3SbSe4 is considered a promising thermoelectric material because of its large effective mass and low thermal conductivity, originating from its unique lattice structure. However, Cu3SbSe4 has intrinsically low carrier concentration and relatively high electric resistance which limit performance. Recently, a zT improvement in Cu3SbSe4 was reported where doping/precipitation is controlled..... More

                
Estimation of the Highest Thermoelectric Performance of the Bi-Doped SnTe at Room Temperature
Bi 도핑에 따른 SnTe의 상온 최대 열전성능지수 예측
Joonha Lee, Hyunjin Park, Jeong-Yeon Kim, Won-Seon Seo, Heesun Yang, Umut Aydemir, Se Yun Kim, Weon Ho Shin, Hyun-Sik Kim
이준하, 박현진, 김정연, 서원선, 양희선, Umut Aydemir, 김세윤, 신원호, 김현식
Korean J. Met. Mater. 2023;61(12):915-922.   Published online 2023 Nov 30
DOI: https://doi.org/10.3365/KJMM.2023.61.12.915

Abstract
SnTe has drawn much attention due to its Pb-free composition along with tunable electronic and lattice structures. However, its intrinsically high defect concentration and high lattice thermal conductivity (κ1) have hindered its application in devices. Recently, Bi doping at Sn-sites in Sn1-xBixTe (x = 0.0 – 0.08) has been demonstrated..... More

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