Abstract
We investigated the effect of rapid thermal annealing (RTA) temperature report on oxygendeficient rutile TiO_2-x thin-film transistors deposited by RF magnetron sputtering. Amorphous TFTs that use TiO_2-x semiconductors as an active layer can be fabricated by low-temperature process and show remarkable electrical performance. The RTA post-annealing process provides greater production..... More