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금속박막의 고상 및 액상 비젖음 공정을 통한 AuNi 이종금속 나노입자의 자기 정렬 및 성분 혼합 제어
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문윤환, 박종근, 오용준
Korean J. Met. Mater.
2024;62(1):51-56. Published online 2023 Dec 29
DOI:
https://doi.org/10.3365/KJMM.2024.62.1.51
Abstract
Immiscible Au-Ni alloy thin films undergo phase separation and dewetting because of thermodynamic and morphological instability at elevated temperatures below the miscibility gap. We report the formation and assembly of bimetallic nanoparticles (BNPs) on topographic Si templates. An ordered array of inverted pyramidal pits were produced via solid-state and liquid-state.....
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Cu 박막의 두께 변화에 따른 면상발열체 특성 연구
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최두호
Korean J. Met. Mater.
2022;60(7):511-516. Published online 2022 Jun 3
DOI:
https://doi.org/10.3365/KJMM.2022.60.7.511
Abstract
In this study, ultrathin (4-40 nm) Cu-layer-based transparent heaters prepared on glass substrates were investigated for cost-effective applications. The Cu heaters were embedded between ZnO layers serving as anti-reflection and anti-corrosion layers. The Cu layer thicknesses varied in the range of 4-40 nm, and the corresponding structural, electrical, optical and.....
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초음파 전열처리를 이용한 a-IGZO 트랜지스터의 향상된 전기적 성능과 바이어스 안정성
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이재윤, 유수창, 조한림, 최성곤, 유흥균, 정용진, 김성진
Korean J. Met. Mater.
2022;60(4):307-314. Published online 2022 Mar 28
DOI:
https://doi.org/10.3365/KJMM.2022.60.4.307
Abstract
Vacuum-processed oxide semiconductors have enabled incredible recent advances in the scientific research of metal oxide thin-film transistors (TFTs) and their introduction in commercial displays. Developing metal oxide transistors with low processing temperatures, on the other hand, remains a challenge. Metal oxide transistors are commonly produced at high processing temperatures (over.....
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텅스텐 나노박막의 상변태를 이용한 반투명 면상발열체 형성 연구
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최지윤, 최두호
Korean J. Met. Mater.
2021;59(9):664-669. Published online 2021 Aug 4
DOI:
https://doi.org/10.3365/KJMM.2021.59.9.664
Abstract
In this study, we prepared highly thermostable semi-transparent heaters composed of W layers with thicknesses of 1-20 nm, on which a 30 nm-thick ZnO layer was deposited to serve as an anti-oxidation barrier. The optical transmittance and sheet resistance of the heaters could be greatly modulated by varying the W.....
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Web of Science 1
Crossref 1
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기판 바이어스와 스퍼터 압력 조절을 통한 저저항 알루미늄 박막 형성 연구
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최두호
Korean J. Met. Mater.
2020;58(10):715-720. Published online 2020 Oct 5
DOI:
https://doi.org/10.3365/KJMM.2020.58.10.715
Abstract
In this study, the critical role of substrate bias during the sputter deposition of Al thin films is discussed. Two sets of Al thin films having a nominal thickness of 300 nm were deposited at sputtering pressures of 4.1 and 1.5 mTorr, respectively, with an applied negative substrate bias in.....
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Crossref 1
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마그네트론 스퍼터링법으로 제조된 ZnO/Cu/ZnO 유연 투명전극 성능 최적화 연구
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김대균, 이태형, 최두호
Korean J. Met. Mater.
2019;57(12):795-800. Published online 2019 Nov 22
DOI:
https://doi.org/10.3365/KJMM.2019.57.12.795
Abstract
With the expanding development of flexible optoelectronic devices, the need for high-performance (i.e., high conductivity, high transmittance and flexibility) transparent conductive electrodes has grown. In this study, the critical role of thickness for each of the layers in ZnO/Cu/ZnO transparent conductive electrodes (TCE) for optoelectronic devices has been investigated. The.....
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Crossref 7
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RF 마그네트론 스퍼터링으로 증착한 산소 결핍 구조 TiO
2-x
박막 트랜지스터에 미치는 급속 열처리 온도의 영향
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김한상, 이재윤, 김성진
Korean J. Met. Mater.
2019;57(7):438-446. Published online 2019 Jun 5
DOI:
https://doi.org/10.3365/KJMM.2019.57.7.438
Abstract
We investigated the effect of rapid thermal annealing (RTA) temperature report on oxygendeficient rutile TiO
2-x
thin-film transistors deposited by RF magnetron sputtering. Amorphous TFTs that use TiO
2-x
semiconductors as an active layer can be fabricated by low-temperature process and show remarkable electrical performance. The RTA post-annealing process provides greater production.....
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Web of Science 1
Crossref 1
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스퍼터링법으로 증착된 ZnO/Ag/ZnO 투명전극의 성능 최적화 연구
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조우현, 최두호
Korean J. Met. Mater.
2019;57(2):91-96. Published online 2019 Jan 11
DOI:
https://doi.org/10.3365/KJMM.2019.57.2.91
Abstract
The critical role of the thicknesses of the top and bottom oxide layers, as well as Ag layer, in ZnO/Ag/ZnO transparent conductive electrodes were investigated. The Ag forms a nearly continuous layer at the thickness of 8 nm, at which the Ag sheet resistance of 8.0 Ω/Sq. is lower than.....
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Web of Science 9
Crossref 9
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TiO
2
/TiO
2-x
박막층의 두께가 멤리스터 소자의 특성에 미치는 영향
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김한상, 김성진
Korean J. Met. Mater.
2019;57(2):84-90. Published online 2019 Feb 5
DOI:
https://doi.org/10.3365/KJMM.2019.57.2.84
Abstract
Memristors have been extensively investigated as the fourth fundamental circuit element. Titanium oxide is a common material used to fabricate memristors. In this paper, we investigated the influence of the thickness of the oxide active layer on the Al/TiO2-x/TiO2/heavily doped electrode memristor architecture. An insulating TiO2 thin-film was deposited using.....
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Web of Science 4
Crossref 5
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스핀코팅과 자외선 조사의 동시 적용을 기반한 용액 공정형 Indium Zinc 산화물 트랜지스터 연구
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선비, 김성진
Korean J. Met. Mater.
2017;55(8):572-575. Published online 2017 Aug 1
DOI:
https://doi.org/10.3365/KJMM.2017.55.8.572
Abstract
We investigated solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs) which were fabricated by spin coating with simultaneous irradiation by ultraviolet light. The proposed treatment enhanced the efficient condensation and densification of the oxide semiconducting channel layer by decreasing oxygen-vacancy-related defects and increasing metal-oxide bonds. An IZO TFT irradiated for.....
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Korean J. Met. Mater.
2017;55(4):222-226. Published online 2017 Apr 6
DOI:
https://doi.org/10.3365/KJMM.2017.55.4.222
Abstract
An AlCrTiSiN film composed of 31Al-15Cr-1.7Ti-0.5Si-51.8N (at%) was deposited on a steel substrate by arc ion plating to a thickness of 1 μm. It consisted of nano crystalline hcp-AlN and fcc-CrN. Its corrosion behavior in Ar-1%SO
2
gas at 800 ℃ for 5-50 h was studied. The resulting scales consisted primarily.....
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Korean J. Met. Mater.
2017;55(3):209-212. Published online 2017 Mar 3
DOI:
https://doi.org/10.3365/KJMM.2017.55.3.209
Abstract
Sn-doped ZnO (ZTO)/Ag/ZTO tri-layer films were deposited on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering and then vacuum annealed at 100, 200 and 300 ℃ for 30 min with a proportions of H
2
/N
2
gas flow of 6/6 sccm, to investigate the effects of annealing temperature.....
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Material Analysis & Characterization
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Korean J. Met. Mater.
2017;55(1):67-71. Published online 2017 Jan 5
DOI:
https://doi.org/10.3365/KJMM.2017.55.1.67
Abstract
ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for.....
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Crossref 1
Optical Devices & Energy Materials
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Korean J. Met. Mater.
2016;54(8):609-614. Published online 2016 Aug 5
DOI:
https://doi.org/10.3365/KJMM.2016.54.8.609
Abstract
The vapor phase transport (VPT) process is usually used for the growth of one-dimensional nanostructures rather than for film deposition. In this study, for the first time, we report on the fabrication and optical propeties of ZnO film produced by VPT combined with rapid heating. The X-ray diffraction results showed.....
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Crossref 1
Electronic Materials
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Korean J. Met. Mater.
2016;54(8):605-608. Published online 2016 Aug 5
DOI:
https://doi.org/10.3365/KJMM.2016.54.8.605
Abstract
In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO
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-deposited glass substrate to determine the effect of the thickness of a thin TiO
2
buffer layer on the structural, optical, and electrical.....
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