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The Mechanism Behind the High zT of SnSe<sub>2</sub> Added SnSe at High Temperatures
SnSe2 결함 도입으로 인한 SnSe의 고온 열전성능 증대 메커니즘
JunSu Kim, Seong-Mee Hwang, Hyunjin Park, Yinglu Tang, Won-Seon Seo, Chae Woo Ryu, Heesun Yang, Weon Ho Shin, Hyun-Sik Kim
김준수, 황성미, 박현진, Yinglu Tang, 서원선, 류채우, 양희선, 신원호, 김현식
Korean J. Met. Mater. 2023;61(11):857-866.   Published online 2023 Oct 29
DOI: https://doi.org/10.3365/KJMM.2023.61.11.857

Abstract
SnSe is a promising thermoelectric material due to its low toxicity, low thermal conductivity, and multiple valence band structures, which are ideal for high electronic transport properties. The multiple valence band structure has attracted many attempts to engineer the carrier concentration of the SnSe via doping, to place its fermi..... More

                
Thermoelectric Properties of Ta-doped Zr<sub>0.6-x</sub>Ti<sub>0.4</sub>Ta<sub>x</sub>NiSn n-type Half-Heusler Materials
Ta 도핑된 Zr0.6-xTi0.4TaxNiSn n형 하프-호이슬러 소재의 열전특성
Sung-Jae Joo, Ji-Hee Son, JeongIn Jang, Bok-Ki Min, Bong-Seo Kim
주성재, 손지희, 장정인, 민복기, 김봉서
Korean J. Met. Mater. 2022;60(3):213-219.   Published online 2022 Feb 8
DOI: https://doi.org/10.3365/KJMM.2022.60.3.213

Abstract
Half-Heusler (HH) thermoelectric materials are promising for mid- to high-temperature applications, and MNiSn (M = Ti, Zr, Hf) is a representative n-type HH alloy. In general, the M sites are mixed with isoelectronic elements Ti, Zr, and Hf, to lower the lattice thermal conductivity, and the Sn sites are doped..... More

                   Web of Science 1  Crossref 1
Doping Effect of Indium on Zinc-tin Oxide Thin-Film Transistor Using Electrohydrodynamic Jet Spray Technology
전기수력학젯 분산 기술을 이용한 아연-주석 산화물 박막트랜지스터의 인듐 도핑 효과
Woon-Seop Choi
최운섭
Korean J. Met. Mater. 2019;57(4):258-263.   Published online 2019 Apr 5
DOI: https://doi.org/10.3365/KJMM.2019.57.4.258

Abstract
The effect of indium doping on zinc-tin oxide thin-film transistor was investigated using electrohydrodynamic (EHD) jet spray technology. EHD jet spray is a new and unique drop-on-demand patterning technology for printed electronics. After optimizing process parameters, the EHD jet spraying conditions were determined to be a voltage of 4.5 kV,..... More

                   Web of Science 2  Crossref 2
Domain Wall Motions in a Near-Morphotropic Pb(Zr,Ti)O3 Under Mechanical Stress Observed by In Situ Piezoresponse Force Microscopy
Kwanlae Kim
김관래
Korean J. Met. Mater. 2019;57(1):38-42.   Published online 2018 Dec 14
DOI: https://doi.org/10.3365/KJMM.2019.57.1.38

Abstract
Many important material properties of ferroelectric ceramics such as piezoelectric coefficient and hysteresis curve are governed by domain structures and their evolution processes. In the present work, domain wall motions in a near-morphotropic Pb(Zr,Ti)O3 under an external compressive stress were observed using in situ piezoresponse force microscopy (PFM). This specific..... More

                   Web of Science 1  Crossref 2
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