Abstract
The growth evolution of undoped and Si-doped β-Ga₂O₃ films prepared using plasma-assisted molecular beam epitaxy was investigated. The effect of Si effusion cell temperatures on surface morphology and the electrical properties of the homoepitaxial (010) β-Ga₂O₃ films was systematically investigated. Using a solid source of Si as an n-type dopant..... More

Abstract
α-Ga₂O₃ has the largest bandgap (~5.3 eV) among the five polymorphs of Ga₂O₃ and is a promising candidate for high power electronic and optoelectronic devices. To fabricate various device structures, it is important to establish an effective dry etch process which can provide practical etch rate, smooth surface morphology and..... More

Abstract
In this study, a glass fiber is fabricated using a continuous spinning process from alkali resistant (AR) glass with 4 wt% zirconia. In order to confirm the melting properties of the marble glass, the raw material is placed into a Pt crucible and melted at 1650 ℃ for 2 h,..... More