Abstract
Transparent TiO₂ single layer and TiO₂/Ag/TiO₂(TAT) tri-layer films were deposited by DC and RF magnetron sputter on a polyimide substrate at room temperature. During the TAT deposition, the thickness of the TiO₂ layer was kept at 20 nm, while the Ag interlayer was varied as 10, 15, 20 nm to..... More

Abstract
Transparent and conductive ZnO 50 nm/Au 8 nm/ZnO 50 nm tri-layer films were deposited on poly-imide films by radio frequency (RF) and direct current (DC) magnetron sputtering at room temperature, and then the effect of electron irradiation on the crystallization, electrical resistivity and optical properties of the films was considered..... More

Abstract
Transparent and conductive Ti-doped In₂O₃ (TIO)/Ag/Ti-doped In₂O₃ (TAT) multilayer films were deposited on colorless poly imide (CPI) substrates by direct current (DC) and radio frequency (RF) magnetron sputtering at room temperature. During deposition the thickness of both the top and bottom TIO layer was fixed at 30 nm, while the..... More

Abstract
Transparent and conductive Ti doped In₂O₃ (TIO) films were prepared on slide glass substrate using a radio frequency (RF) magnetron sputter and then subjected to Transparent and conductive Ti doped In₂O₃ (TIO) films were prepared on a glass slide substrate using radio frequency (RF) magnetron sputter. The film surface was..... More

Abstract
Transparent conductive ZnO 50 nm/Ag 10 nm/SnO₂ 50 nm (ZAS) tri-layer films were deposited on glass substrates by magnetron sputtering, and then the surface was subjected to intense electron beam irradiation to investigate the effects of electron irradiation on the structural, optical, and electrical properties of the films. After deposition,..... More

Abstract
ZnO 50 nm/Ag 10 nm/SnO₂ 50 nm (ZAS) tri-layer films were deposited on a glass substrate by RF and DC magnetron sputtering and then underwent rapid thermal annealing in a low vacuum of 1×10^-3 Torr to investigate the effects of post-deposition annealing on the optical and electrical properties of the..... More

Abstract
ZnO/Ag/SnO2 (ZAS) tri-layer films were prepared on glass substrates via RF and DC magnetron sputtering, and then the influence of the thickness of the ZnO and SnO2 layers on the optical and electrical properties of the ZAS films was investigated. As deposited ZnO 50 nm/Ag 10 nm/SnO2 50 nm films..... More

Abstract
Sn-doped ZnO (ZTO)/Ag/ZTO tri-layer films were deposited on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering and then vacuum annealed at 100, 200 and 300 ℃ for 30 min with a proportions of H₂/N₂ gas flow of 6/6 sccm, to investigate the effects of annealing temperature..... More

Abstract
Ti-doped In₂O₃ (TIO) thin films were deposited on glass substrates by RF magnetron sputtering. The films were then annealed at 100, 200 or 300 °C for 30 min to investigate the effects of the annealing temperature on the films’ structural, electrical and optical properties. The films annealed at 200 °C..... More

Electronic Materials

Abstract
In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO₂-deposited glass substrate to determine the effect of the thickness of a thin TiO₂ buffer layer on the structural, optical, and electrical..... More