Abstract
Sn-doped ZnO (ZTO)/Ag/ZTO tri-layer films were deposited on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering and then vacuum annealed at 100, 200 and 300 ℃ for 30 min with a proportions of H₂/N₂ gas flow of 6/6 sccm, to investigate the effects of annealing temperature..... More

Abstract
Ti-doped In₂O₃ (TIO) thin films were deposited on glass substrates by RF magnetron sputtering. The films were then annealed at 100, 200 or 300 °C for 30 min to investigate the effects of the annealing temperature on the films’ structural, electrical and optical properties. The films annealed at 200 °C..... More

Electronic Materials

Abstract
In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO₂-deposited glass substrate to determine the effect of the thickness of a thin TiO₂ buffer layer on the structural, optical, and electrical..... More