Enhancement of the Opto-Electrical Properties of Ag Intermediate ZTO Films by Vacuum Annealing |
Hyun-Joo Moon, Daeil Kim |
School of Materials Science and Engineering, University of Ulsan, Ulsan 44610, Republic of Korea |
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Received: 7 June 2016; Accepted: 30 August 2016. Published online: 3 March 2017. |
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ABSTRACT |
Sn-doped ZnO (ZTO)/Ag/ZTO tri-layer films were deposited on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering and then vacuum annealed at 100, 200 and 300 ℃ for 30 min with a proportions of H2/N2 gas flow of 6/6 sccm, to investigate the effects of annealing temperature on their electrical, and optical properties. After annealing at a temperature of 300 ℃, the optical transmittance in the visible wavelength region increased from 82.0 to 83.8% and their electrical resistivity decreased to as low as 5.38×10-5 Ω cm at an annealing temperature of 300 ℃. The figure of merit revealed that ZTO/Ag/ZTO films annealed at 300 ℃ have higher optical and electrical performance than the other TCO films prepared under different conditions. |
Keywords:
thin films, sputtering, optical properties, AFM, figure of merit. |
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