| Effect of Post-Deposition Annealing on the Structural, Optical and Electrical Properties of Ti-doped Indium Oxide Thin Films |
| Sung-Bo Heo1,2, Hyun-Joo Moon1, Jeong-Hyeon Oh1, Young-Hwan Song1, Tae-Young Eom1, Jun-Ho Kim2, Daeil Kim1 |
1School of Materials Science and Engineering, University of Ulsan, Ulsan 44610 , Republic of Korea
2Korea Institute of Industrial Technologies (KITECH), Yangsan 44610, Republic of Korea |
|
|
|
Received: 9 February 2016; Accepted: 10 May 2016. Published online: 5 October 2016. |
|
|
| |
| ABSTRACT |
|
Ti-doped In2O3 (TIO) thin films were deposited on glass substrates by RF magnetron sputtering. The films were then annealed at 100, 200 or 300 °C for 30 min to investigate the effects of the annealing temperature on the films’ structural, electrical and optical properties. The films annealed at 200 °C and above were polycrystalline in phase, and their electrical resistivity decreased to as low as 7.5×10-4 Ω cm at the annealing temperature of 300 °C. The films’ optical transmittance in the visible wavelength region also improved from 77.7% to 81.2% when the annealing temperature was increased. The TIO films’ figures of merit were evaluated, showing that the TIO films annealed at 300 ℃ had better optical and electrical performance than the other films prepared using lower-temperature or no annealing. |
| Keywords:
thin film, sputtering, electrical properties, x-ray diffraction, figure of merit |
|
PDF Links
Full text via DOI
Download Citation 
Print 
