| Enhanced Optical and Electrical Properties of TiO2 Buffered IGZO/TiO2 Bi-Layered Films |
| Hyun-Joo Moon, Daeil Kim |
| School of Materials Science and Engineering, University of Ulsan, Ulsan 44610, Republic of Korea |
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Received: 19 January 2016; Accepted: 20 March 2016. Published online: 5 August 2016. |
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| ABSTRACT |
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In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO2-deposited glass substrate to determine the effect of the thickness of a thin TiO2 buffer layer on the structural, optical, and electrical properties of the films. The thicknesses of the TiO2 buffer layers were 5, 10 and 15 nm, respectively. As-deposited IGZO films with a 10 nm-thick TiO2 buffer layer had an average optical transmittance of 85.0% with lower resistivity (1.83×10-2 Ω cm) than that of IGZO single layer films. The figure of merit (FOM) reached a maximum of 1.44×10-4 Ω-1 for IGZO/10 nm-thick TiO2 bi-layered films, which is higher than the FOM of 6.85×10-5 Ω-1 for IGZO single layer films. Because a higher FOM value indicates better quality transparent conducting oxide (TCO) films, the IGZO/10 nm-thick TiO2 bi-layered films are likely to perform better in TCO applications than IGZO single layer films. |
| Keywords:
thin films, sputtering, optical properties, electrical properties, AFM |
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