Korean J. Met. Mater. ;59(2):121-126. Published online 2021 Jan 27
DOI:
https://doi.org/10.3365/KJMM.2021.59.2.121
Abstract
α-Ga
2O
3 has the largest bandgap (~5.3 eV) among the five polymorphs of Ga
2O
3 and is a promising candidate for high power electronic and optoelectronic devices. To fabricate various device structures, it is important to establish an effective dry etch process which can provide practical etch rate, smooth surface morphology and.....
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