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Korean J. Met. Mater.
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Korean Journal of Metals and Materials
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정밀한 Pb 도핑을 통한 Bi
0.5
Sb
1.5
Te
3
의 열전 성능 향상: Single Parabolic Band 모델을 이용한 분석
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강지원, 황성미, 김세윤, 이창우, 서원선, 김상일, 김현식
Korean J. Met. Mater.
2024;62(10):787-795. Published online 2024 Oct 5
DOI:
https://doi.org/10.3365/KJMM.2024.62.10.787
Abstract
This study investigates the thermoelectric properties of Pb-doped p-type Bi
0.5
Sb
1.5
Te
3
alloys using the Single Parabolic Band (SPB) model, focusing on optimizing room-temperature performance. We systematically analyze the effects of Pb doping (0, 0.49, 0.65, 0.81, 0.97, and 1.3 at%) on key parameters including density-of-states effective mass (
m
d
*), non-degenerate mobility.....
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Cu 도핑 및 Electric Current Pulse 공정에 의한 Bi-Sb-Te계 열전소재의 최대 열전성능지수 예측
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이준하, 박현진, 김준수, 서원선, 김상일, 김현식
Korean J. Met. Mater.
2024;62(7):550-557. Published online 2024 Jun 28
DOI:
https://doi.org/10.3365/KJMM.2024.62.7.550
Abstract
Bi
2
Te
3
shows high thermoelectric performance near room temperature, making it the most widely used material in thermoelectric cooling applications. Cu doping has been found to be effective in improving the thermoelectric performance of Bi
2
Te
3
. However, due to the problem of easy migration of Cu ions, the stability of Cu-doped Bi
2
Te
3
.....
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시작물질 농도 제어에 따른 Cu
3
SbSe
4
열전소재의 최대 열전성능지수 예측
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이민규, 황성미, 김세준, 서원선, 김상일, 김현식
Korean J. Met. Mater.
2024;62(6):487-493. Published online 2024 May 31
DOI:
https://doi.org/10.3365/KJMM.2024.62.6.487
Abstract
Cu
3
SbSe
4
is considered a promising thermoelectric material because of its large effective mass and low thermal conductivity, originating from its unique lattice structure. However, Cu
3
SbSe
4
has intrinsically low carrier concentration and relatively high electric resistance which limit performance. Recently, a
zT
improvement in Cu
3
SbSe
4
was reported where doping/precipitation is controlled.....
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Bi 도핑에 따른 SnTe의 상온 최대 열전성능지수 예측
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이준하, 박현진, 김정연, 서원선, 양희선, Umut Aydemir, 김세윤, 신원호, 김현식
Korean J. Met. Mater.
2023;61(12):915-922. Published online 2023 Nov 30
DOI:
https://doi.org/10.3365/KJMM.2023.61.12.915
Abstract
SnTe has drawn much attention due to its Pb-free composition along with tunable electronic and lattice structures. However, its intrinsically high defect concentration and high lattice thermal conductivity (
κ
1
) have hindered its application in devices. Recently, Bi doping at Sn-sites in Sn
1-
x
Bi
x
Te (
x
= 0.0 – 0.08) has been demonstrated.....
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